Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment

Business Wire India

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I²t limit value in the diode section, an indicator of surge current capability.

 

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Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.

 

IX800FXF2YMS4 has an optimized SiC chip design and delivers an I²t characteristic of 300kA²s^[1], an indicator of the diode section’s surge current capability under abnormal conditions.

 

 

The module has a drain-source on-voltage (sense) (V_DS(on)sense) of 1.4V (typ.)^[2], which helps reduce conduction losses. Its turn-on switching loss (E_on) of 185mJ (typ.)^[3] and turn-off switching loss (E_off) of 175mJ (typ.)^[3] help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.

 

 

The new product adopts the iXPLV™ package^[4], which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.

 

 

This new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV™ package to four, broadening the range of available product options.

 

 

Toshiba will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications. The company will also contribute to more reliable, efficient and compact industrial equipment.

 

 

Notes:
[1] Test conditions: T_ch(initial)=175°C, V_GS=-6V, half sine-wave 10ms 1pulse, F.R.=1%
[2] Test conditions: I_D=800A, V_GS=+20V, T_ch=25°C
[3] Test conditions: V_DD=1800V, I_D=800A, V_GS=+20V/-6V, C_gs=100nF, R_G(on)=1.2Ω, R_G(off)=1.2Ω, T_ch=175°C, L_S≃70nH
[4] iXPLV^TM: Abbreviation for intelligent fleXible Package Low Voltage

 

 

Applications

 

 

Industrial equipment

 

 

• Railway traction inverters and converters
• Renewable energy power generation systems
• Power conversion systems (solid-state transformers (SST)^[5]; uninterruptible power supplies (UPS); energy storage systems (ESS), etc.)
• Industrial motor control equipment, etc.

 

Note:
[5] SST: A next-generation transformer that utilizes power semiconductors to achieve compact size, highly efficient voltage conversion, and advanced power control.

 

Features

 

 

• Specifies I2t limit value (Diode) rating: I²t=300kA²s
• Low drain-source on-voltage (sense): V_DS(on)sense=1.4V (typ.)
• Low switching loss: E_on=185mJ (typ.), E_off=175mJ (typ.)
• Channel temperature rating: T_ch=175°C
• Adopts the iXPLV^TM package.

 

Main Specifications

 

(Tc=25°C, unless otherwise specified)
Part number				IX800FXF2YMS4
Package		Name		iXPLV™
		Size (mm)	Typ.	144×99.5×40
Absolute maximum ratings	Drain-source voltage VDSS (V)			3300
	Gate-source voltage VGSS (V)			+25/-10
	Drain current (DC) ID (A)			800
	Drain current (pulsed) IDP (A)			1600
	Channel temperature Tch (°C)			175
	Isolation voltage Visol (Vrms)	AC, 60s		6000
	I2t limit value (Diode) I2t (kA2s)	Tch(initial)=175°C, VGS=-6V, half sine-wave 10ms 1pulse, F.R.=1%		300
Electrical characteristics	Drain-source on-voltage (sense) VDS(on)sense (V)	ID=800A, VGS=+20V,   Tch=25°C	Typ.	1.4
	Source-drain on-voltage (sense) VSD(on)sense (V)	IS=800A, VGS=+20V,   Tch=25°C	Typ.	1.4
	Source-drain off-voltage (sense) VSD(off)sense (V)	IS=800A, VGS=-6V,   Tch=25°C	Typ.	2.2
	Stray inductance LsPN (nH)	P terminal-N terminal	Typ.	12
	Turn-on switching loss   Eon (mJ)	VDD=1800V, ID=800A, VGS=+20V/-6V, Cgs=100nF, RG(on)=1.2Ω, RG(off)=1.2Ω, Tch=175°C, LS≃70nH	Typ.	185
	Turn-off switching loss   Eoff (mJ)		Typ.	175

 

Follow the link below for more on the new product.
IX800FXF2YMS4

 

Follow the link below for more on Toshiba’s SiC power device lineup.
SiC Power Devices

 

 

* iXPLV™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

About Toshiba Electronic Devices & Storage Corporation

 

 

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

 

 

Its 17,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.

 

 

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

 

 

 

 

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